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Table 1 The oxidation parameters used for sample groups A–D for the bi-layer sample type

From: Correlation between Al grain size, grain boundary grooves and local variations in oxide barrier thickness of Al/AlOx/Al tunnel junctions by transmission electron microscopy

Sample group

A

B

C

D

\(\hbox {t}_{{\mathrm{ox}}}\) (min)

10

10

30

30

\(\hbox {p}_{{\mathrm{ox}}}\) (mbar)

0.01

0.1

0.01

0.1

  1. All devices were oxidized at room temperature in a pure \(\hbox {O}_2\)-environment