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Table 1 The default values of device parameters

From: An investigation into the effects of band gap and doping concentration on Cu(In,Ga)Se2 solar cell efficiency

Parameters

N-ZnO

N-CdS

P-CIGS

Thickness (µm)

0.2

0.05

3

Dielectric constant

7.8

8.28

13.6

Refractive index

2

3.16

3.67

Band gap (eV)

3.3

2.42

1.15

Electron affinity (eV)

4.6

4.4

4.5

Electron mobility (cm2/Vs)

160

350

100

Hole mobility (cm2/Vs)

40

50

25

Conduction band effective density of states (cm−3)

2.2 × 1018

1.7 × 1019

2 × 1018

Valence band effective density of states (cm−3)

1.8 × 1019

2.4 × 1018

1.6 × 1019

Donor concentration (cm−3)

1 × 1018

1 × 1018

0

Acceptor concentration (cm−3)

0

0

2 × 1016

Electron lifetime (s)

5 × 10−8

2 × 10−8

1 × 10−8

Hole lifetime (s)

5 × 10−9

6 × 10−8

5 × 10−8

Absorption file

zno.a

cds.a

cigs.a