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Table 1 The default values of device parameters

From: An investigation into the effects of band gap and doping concentration on Cu(In,Ga)Se2 solar cell efficiency

Parameters N-ZnO N-CdS P-CIGS
Thickness (µm) 0.2 0.05 3
Dielectric constant 7.8 8.28 13.6
Refractive index 2 3.16 3.67
Band gap (eV) 3.3 2.42 1.15
Electron affinity (eV) 4.6 4.4 4.5
Electron mobility (cm2/Vs) 160 350 100
Hole mobility (cm2/Vs) 40 50 25
Conduction band effective density of states (cm−3) 2.2 × 1018 1.7 × 1019 2 × 1018
Valence band effective density of states (cm−3) 1.8 × 1019 2.4 × 1018 1.6 × 1019
Donor concentration (cm−3) 1 × 1018 1 × 1018 0
Acceptor concentration (cm−3) 0 0 2 × 1016
Electron lifetime (s) 5 × 10−8 2 × 10−8 1 × 10−8
Hole lifetime (s) 5 × 10−9 6 × 10−8 5 × 10−8
Absorption file zno.a cds.a cigs.a