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Table 1 Range of relevant process parameters

From: Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper

Pressure

Power

Cleaning process

Synthesis

Time

H2 flow

CH4 flow

Time

H2 flow

CH4 flow

50–65 mbar

1 kW

20 min

200 sccm

–

8 min

118.8–84 sccm

1.2–36 sccm

  1. Relevant process parameters and the maximum and minimum values are depicted. While the cleaning process has been held constant as well as the process time, different microwave powers, process pressures and gas flows have been applied. The total gas flow, however, has not been alternated and has been kept at a constant value of 120 sccm during the process
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