Figure 1From: Oxygen doping of HTSC and resistive switching in HTSC-based heterostructures XPS and UPS of the as grown and ion milled Nd 1.75 Ce 0.15 CuO 4− y films. (a) Initial stage of ion milling (up to 10-15 nm depth). XPS spectrum of the film surface (top), corresponding heterocontact scheme (bottom); (b) Ion milling at 30 nm depth. XPS spectrum (top) and UPS spectra (middle and bottom) together with the heterocontact scheme.Back to article page